RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Chun Well Technology Holding Limited D4U0830160B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
17.4
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0830160B 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
56
Around -75% lower latency
Faster write speed, GB/s
12.5
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
32
Read speed, GB/s
4,387.7
17.4
Write speed, GB/s
1,813.5
12.5
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
693
3137
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMW128GX4M4D3000C16 32GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMU16GX4M2C3000C15 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited KD48GS88A-26N1600 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Samsung M471A5244CB0-CWE 4GB
MemxPro Inc. D4S8GHIOFFC 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Report a bug
×
Bug description
Source link