RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
18.2
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
56
Around -115% lower latency
Faster write speed, GB/s
17.3
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
26
Read speed, GB/s
4,387.7
18.2
Write speed, GB/s
1,813.5
17.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
693
3938
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMV16GX4M1A2133C15 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston 9905702-135.A00G 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston KHX2400C15S4/4G 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMY16GX3M2A2400C11 8GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-8GVK 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Kingston 9905744-006.A00G 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT351S6CFR8C-PB 4GB
Peak Electronics 256X64M-67E 2GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Report a bug
×
Bug description
Source link