RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3600C16-8GTZNC 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
G Skill Intl F4-3600C16-8GTZNC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
19.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C16-8GTZNC 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
56
Around -115% lower latency
Faster write speed, GB/s
17.2
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
26
Read speed, GB/s
4,387.7
19.5
Write speed, GB/s
1,813.5
17.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
693
3840
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB RAM comparisons
Corsair CMR16GX4M2A2666C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A1G43TB1-CTD 8GB
AMD AE34G1601U1 4GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
G Skill Intl F5-6000J3636F16G 16GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Kingston 99U5584-017.A00LF 4GB
Panram International Corporation W4U2666P-8G 8GB
SK Hynix HMT351S6BFR8C-H9 4GB
G Skill Intl F4-3000C16-8GISB 8GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905630-063.A00G 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G30C15U4W.8FE 8GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Corsair CM2X1024-8500C5D 1GB
Avant Technology J641GU42J5213N0 8GB
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STKD4XMP2400-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Patriot Memory (PDP Systems) PSD48G240081 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Report a bug
×
Bug description
Source link