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Samsung M378T5663QZ3-CF7 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
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Faster reading speed, GB/s
4
11.7
Average value in the tests
Higher memory bandwidth, mbps
6400
1900
Around 3.37% higher bandwidth
Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
45
56
Around -24% lower latency
Faster write speed, GB/s
8.4
1,813.5
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
45
Read speed, GB/s
4,387.7
11.7
Write speed, GB/s
1,813.5
8.4
Memory bandwidth, mbps
6400
1900
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
no data
Ranking PassMark (The more the better)
693
2387
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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