RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Chun Well Technology Holding Limited D4U0830160B 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Chun Well Technology Holding Limited D4U0830160B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
32
Around 19% lower latency
Reasons to consider
Chun Well Technology Holding Limited D4U0830160B 8GB
Report a bug
Faster reading speed, GB/s
17.4
12.8
Average value in the tests
Faster write speed, GB/s
12.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
32
Read speed, GB/s
12.8
17.4
Write speed, GB/s
9.0
12.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3137
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Chun Well Technology Holding Limited D4U0830160B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SpecTek Incorporated ?????????????????? 2GB
Team Group Inc. DDR4 2800 8GB
Samsung 36HTF51272PZ-800H1 4GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Mushkin 99[2/7/4]191F 4GB
G Skill Intl F3-1333C9-4GIS 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2666C19-8GVK 8GB
Kingston 99U5471-030.A00LF 8GB
Micron Technology 8G2666CL19 8GB
Peak Electronics 256X64M-67E 2GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
Kingston ACR512X64D3S13C9G 4GB
Mushkin 99[2/7/4]192F 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-16GTZR 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK32GX4M4B3200C14 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3866C18-4GVK 4GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
Report a bug
×
Bug description
Source link