RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT16G4DFS8266.C8FE 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Crucial Technology CT16G4DFS8266.C8FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
29
Around 10% lower latency
Reasons to consider
Crucial Technology CT16G4DFS8266.C8FE 16GB
Report a bug
Faster reading speed, GB/s
14.2
12.8
Average value in the tests
Faster write speed, GB/s
10.3
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
29
Read speed, GB/s
12.8
14.2
Write speed, GB/s
9.0
10.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
2984
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
A-DATA Technology DDR3 1333G 2GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905700-012.A00G 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M471A1G43DB0-0-B 8GB
Samsung 1600 CL10 Series 8GB
Kingston ACR26D4U9S1KA-4 4GB
Kingston 99U5584-010.A00LF 4GB
Roa Logic BV W4U2666CX1-8G 8GB
Samsung M393B5170FH0-CH9 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C14-32GTRS 32GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CB8GU2400.C8ET 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3000C16-8GISB 8GB
Kingston 99U5471-025.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Report a bug
×
Bug description
Source link