RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Report a bug
Faster reading speed, GB/s
16.2
12.8
Average value in the tests
Faster write speed, GB/s
12.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
26
Read speed, GB/s
12.8
16.2
Write speed, GB/s
9.0
12.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2728
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston KHX2933C17D4/8G 8GB
Kingston 99U5428-018.A00LF 8GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9905625-030.A00G 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX3200C18D4/4G 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905598-040.A00G 16GB
ASint Technology SSA302G08-EGN1C 4GB
Essencore Limited KD4AGU880-36A180C 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3600C17-8GTZ 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD824A.M16FB 8GB
Report a bug
×
Bug description
Source link