RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Report a bug
Faster reading speed, GB/s
16.2
12.8
Average value in the tests
Faster write speed, GB/s
12.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
26
Read speed, GB/s
12.8
16.2
Write speed, GB/s
9.0
12.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2728
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2800C16-8GVR 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CML8GX3M2A1866C9 4GB
Gloway International (HK) STK4U2400D15082C 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905622-057.A00G 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston ACR24D4S7D8MB-16 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMT16GX4M2C3200C14 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS824A.M8FE 4GB
Samsung M3 93T5750CZA-CE6 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-4266C19-8GTZKW 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston KHX3000C16D4/16GX 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CMR64GX4M8C3200C16 8GB
Report a bug
×
Bug description
Source link