RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around -8% lower latency
Faster reading speed, GB/s
16
12.8
Average value in the tests
Faster write speed, GB/s
12.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
24
Read speed, GB/s
12.8
16.0
Write speed, GB/s
9.0
12.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2925
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C16-16GVS 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Asgard VMA44UI-MEC1U2AW2 32GB
Corsair CM5S16GM4800A40K2 16GB
Panram International Corporation PUD42400C154G2NJK 4GB
Elpida EBE21UE8ACUA-8G-E 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Essencore Limited IM44GU48N28-GGGHM 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905734-018.A00G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905624-010.A00G 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-2800C15-8GRK 8GB
Team Group Inc. Team-Value-800 2GB
Kingston 9965662-019.A00G 32GB
Kingston 9905403-156.A00LF 2GB
Kingston 9965639-002.A01G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD8GX4M2B3866C18 4GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905702-014.A00G 8GB
Report a bug
×
Bug description
Source link