RAM comparison Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Samsung M391B5673EH1-CH9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M391B5673EH1-CH9 2GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Below the latency in the PassMark tests, ns

24 26

Around -8% lower latency
Faster reading speed, GB/s

16 12.8

Average value in the tests
Faster write speed, GB/s

12.5 9.0

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2143 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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