Samsung M391B5673EH1-CH9 2GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB

Overall score

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB

Reasons to consider
Samsung M391B5673EH1-CH9 2GB

Below the latency in the PassMark tests, ns

26 64

Around 59% lower latency
Faster write speed, GB/s

9.0 8.5

Average value in the tests

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Reasons to consider
Micron Technology 18ADF2G72AZ-2G6E1 16GB

Faster reading speed, GB/s

18 12.8

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M391B5673EH1-CH9 2GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

26 64
Read speed, GB/s

12.8 18.0
Write speed, GB/s

9.0 8.5
Memory bandwidth, mbps

10600 21300

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2143 2197

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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