RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Micron Technology 8ATF2G64HZ-2G3A1 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
32
Around 19% lower latency
Reasons to consider
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Report a bug
Faster reading speed, GB/s
14.1
12.8
Average value in the tests
Faster write speed, GB/s
9.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
32
Read speed, GB/s
12.8
14.1
Write speed, GB/s
9.0
9.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2434
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB RAM comparisons
G Skill Intl F4-3600C19-16GSXKB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A4G43MB1-CTD 32GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-2400C16-8GFXR 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMK32GX4M2Z3600C18 16GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMU16GX4M2C3000C15 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Corsair CMY16GX3M4A2133C8 4GB
Hewlett-Packard 7EH67AA# 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS624A.C4FB 4GB
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905711-015.A00G 4GB
Report a bug
×
Bug description
Source link