RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
SpecTek Incorporated 16G2666CL19 16GB
Compare
Samsung M391B5673EH1-CH9 2GB vs SpecTek Incorporated 16G2666CL19 16GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
SpecTek Incorporated 16G2666CL19 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Reasons to consider
SpecTek Incorporated 16G2666CL19 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
26
Around -18% lower latency
Faster reading speed, GB/s
16.8
12.8
Average value in the tests
Faster write speed, GB/s
14.8
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
SpecTek Incorporated 16G2666CL19 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
22
Read speed, GB/s
12.8
16.8
Write speed, GB/s
9.0
14.8
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3296
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
SpecTek Incorporated 16G2666CL19 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M474A1G43DB0-CPB 8GB
A-DATA Technology AD5U48008G-B 8GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M4C3200C15 4GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMW16GX4M2C3600C18 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK32GX4M2L3200C16 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
SK Hynix GKE160SO102408-3000 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8
Nanya Technology NT1GT64U88D0BY-AD 1GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
AMD R948G2806U2S 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
Corsair CM5S16GM4800A40K2 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C18-32GTZR 32GB
Kingston 9965525-144.A00LF 8GB
Corsair CMT16GX4M2K4000C19 8GB
Report a bug
×
Bug description
Source link