RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Teikon TMA851U6CJR6N-VKSC 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Teikon TMA851U6CJR6N-VKSC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
62
Around 58% lower latency
Faster write speed, GB/s
9.0
6.0
Average value in the tests
Reasons to consider
Teikon TMA851U6CJR6N-VKSC 4GB
Report a bug
Faster reading speed, GB/s
16.1
12.8
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
62
Read speed, GB/s
12.8
16.1
Write speed, GB/s
9.0
6.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
1586
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Teikon TMA851U6CJR6N-VKSC 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-32GTZR 32GB
Kingston K1N7HK-ELC 2GB
Golden Empire CL16-18-18 D4-3400 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Kingston 99U5584-005.A00LF 4GB
Panram International Corporation W4U3200PS-16G 16GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M2D3200C16 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston RB24D4U7S8MB-8 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK16GX4M2C3000C16 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMW64GX4M8C3200C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMD16GX4M2B3000C15 8GB
Report a bug
×
Bug description
Source link