RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 9ASF1G72PZ-2G3A1 8GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Faster write speed, GB/s
8.1
7.4
Average value in the tests
Reasons to consider
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Report a bug
Below the latency in the PassMark tests, ns
48
51
Around -6% lower latency
Faster reading speed, GB/s
10.2
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
48
Read speed, GB/s
9.8
10.2
Write speed, GB/s
8.1
7.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2208
2190
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMU32GX4M2A2400C14 16GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KP6FH5-MIE 32GB
Kingston 9965662-016.A00G 16GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Team Group Inc. UD5-6400 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Panram International Corporation PUD42400C168GVS 8GB
Kingston KP4T2F-PSB 4GB
Kingston 9905734-018.A00G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology GD2.1527WH.002 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Apacer Technology 78.B1GET.AU00C 4GB
Samsung M393A4K40CB2-CTD 32GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Crucial Technology CB8GS2400.C8ET 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMD64GX4M4C3200C16 16GB
EVGA 16G-D3-1600-MR 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Report a bug
×
Bug description
Source link