RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Nanya Technology M471A5143EB1-CRC 4GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Nanya Technology M471A5143EB1-CRC 4GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Nanya Technology M471A5143EB1-CRC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
51
79
Around 35% lower latency
Faster write speed, GB/s
8.1
7.9
Average value in the tests
Reasons to consider
Nanya Technology M471A5143EB1-CRC 4GB
Report a bug
Faster reading speed, GB/s
14.7
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Nanya Technology M471A5143EB1-CRC 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
79
Read speed, GB/s
9.8
14.7
Write speed, GB/s
8.1
7.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2208
1710
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Nanya Technology M471A5143EB1-CRC 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3000C16-8GVRB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KF2666C16S4/16G 16GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Corsair CMX4GX3M2A1600C9 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Kingston 99U5584-005.A00LF 4GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C19-8GIS 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C15-8GVK 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2400C15-8GRR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A5244BB0-CRC 4GB
SpecTek Incorporated PSD34G13332 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Report a bug
×
Bug description
Source link