RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70QH0-YK0 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Compare
Samsung M393B1G70QH0-YK0 8GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Overall score
Samsung M393B1G70QH0-YK0 8GB
Overall score
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70QH0-YK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
52
66
Around 21% lower latency
Faster write speed, GB/s
8.0
7.9
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Report a bug
Faster reading speed, GB/s
15.9
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70QH0-YK0 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
52
66
Read speed, GB/s
9.8
15.9
Write speed, GB/s
8.0
7.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2179
1877
Samsung M393B1G70QH0-YK0 8GB RAM comparisons
Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70QH0-YK0 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
SK Hynix DDR2 800 2G 2GB
Corsair CMD8GX4M2B3866C18 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston 9965525-144.A00LF 8GB
Kingston KHX3200C20S4/16G 16GB
Samsung M471B5273DH0-CH9 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
SK Hynix HYMP112U64CP8-S5 1GB
Kingston XJ69DF-MIE 8GB
Kingston 9905471-001.A01LF 2GB
Kingston 9905702-119.A00G 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3000C14-8GVK 8GB
Kingston 9905403-061.A00LF 2GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
A-DATA Technology DQKD1A08 1GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Kingston 99U5403-036.A00G 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Transcend Information JM1333KLN-4G 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Report a bug
×
Bug description
Source link