RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M393B2G70BH0-CK0 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
54
Around -125% lower latency
Faster reading speed, GB/s
16
9.2
Average value in the tests
Faster write speed, GB/s
12.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
54
24
Read speed, GB/s
9.2
16.0
Write speed, GB/s
8.1
12.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2105
2925
Samsung M393B2G70BH0-CK0 16GB RAM comparisons
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Samsung M391B5673FH0-CH9 2GB
Corsair CM4X4GF2666Z16K4 4GB
SK Hynix DDR2 800 2G 2GB
Corsair CMK16GX4M2A2666C16 8GB
Kingston 99U5584-001.A00LF 4GB
Golden Empire CL14-14-14 D4-2400 16GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMD16GX4M4B3000C14 4GB
Kingston 9905403-156.A00LF 2GB
Kingston KF3000C15D4/8GX 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905700-011.A00G 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905701-141.A00G 16GB
Corsair CM2X1024-8500C5D 1GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Kingston 9905316-106.A02LF 1GB
Kingston XRMWRN-MIE2 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Kingmax Semiconductor FSFF65F-C8KL9 4GB
Samsung M471B5773CHS-CH9 2GB
Report a bug
×
Bug description
Source link