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Samsung M393B4G70EMB-CK0 32GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Samsung M393B4G70EMB-CK0 32GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Overall score
star star star star star
Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Overall score
star star star star star
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Differences Specifications Comments

Differences

Samsung M393B4G70EMB-CK0 32GB Reasons to consider
Samsung M393B4G70EMB-CK0 32GB
Report a bug
Micron Technology 18ASF2G72PDZ-2G3A1 16GB Reasons to consider
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    41 left arrow 66
    Around -61% lower latency
  • Faster reading speed, GB/s
    7.7 left arrow 7.3
    Average value in the tests
  • Faster write speed, GB/s
    7.6 left arrow 6.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B4G70EMB-CK0 32GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    66 left arrow 41
  • Read speed, GB/s
    7.3 left arrow 7.7
  • Write speed, GB/s
    6.6 left arrow 7.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1760 left arrow 1855

Samsung M393B4G70EMB-CK0 32GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
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