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Samsung M393B5170FH0-CH9 4GB
AMD R748G2133U2S-UO 8GB

Samsung M393B5170FH0-CH9 4GB vs AMD R748G2133U2S-UO 8GB

Overall score
star star star star star
Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Overall score
star star star star star
AMD R748G2133U2S-UO 8GB

AMD R748G2133U2S-UO 8GB

Differences Specifications Comments

Differences

Samsung M393B5170FH0-CH9 4GB Reasons to consider
Samsung M393B5170FH0-CH9 4GB
Report a bug
AMD R748G2133U2S-UO 8GB Reasons to consider
AMD R748G2133U2S-UO 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 49
    Around -96% lower latency
  • Faster reading speed, GB/s
    15 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 8.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170FH0-CH9 4GB
AMD R748G2133U2S-UO 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 25
  • Read speed, GB/s
    10.0 left arrow 15.0
  • Write speed, GB/s
    8.2 left arrow 12.0
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2116 left arrow 2600

Samsung M393B5170FH0-CH9 4GB RAM comparisons

Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB

AMD R748G2133U2S-UO 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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