RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Compare
Samsung M393B5170FH0-CH9 4GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB
Overall score
Samsung M393B5170FH0-CH9 4GB
Overall score
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
49
Around -113% lower latency
Faster reading speed, GB/s
17
10
Average value in the tests
Faster write speed, GB/s
13.4
8.2
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
23
Read speed, GB/s
10.0
17.0
Write speed, GB/s
8.2
13.4
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2116
2936
Samsung M393B5170FH0-CH9 4GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3333C16-16GTZKW 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KF3733C19D4/16GX 16GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Samsung M393B5170FH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Kingston ACR16D3LS1NGG/4G 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3600C18-8GTRG 8GB
Samsung M471B5273DH0-CK0 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Samsung M378B5673FH0-CH9 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Kingston KVR16N11/8-SP 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMT64GX4M8C3200C16 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Samsung 1600 CL10 Series 8GB
Kingston ASU21D4U5S8MB-8 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Report a bug
×
Bug description
Source link