RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-3300C16-8GTZKW 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
G Skill Intl F4-3300C16-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
21
Average value in the tests
Faster write speed, GB/s
2,404.5
11.7
Average value in the tests
Reasons to consider
G Skill Intl F4-3300C16-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
55
104
Around -89% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
55
Read speed, GB/s
3,192.0
21.0
Write speed, GB/s
2,404.5
11.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
2457
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
G Skill Intl F4-3300C16-8GTZKW 8GB RAM comparisons
Apacer Technology 78.01G86.9H50C 1GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905734-022.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Golden Empire CL16-16-16 D4-2400 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Kingston 9905403-444.A00LF 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Kingston 99U5403-465.A00LF 8GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 36ASF4G72PZ-2G3D1 32GB
Strontium EVMT8G1600U86S 8GB
Kingston HP24D4R7D4MAM-32 32GB
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681PAE-16IC 8GB
Report a bug
×
Bug description
Source link