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Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
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Faster reading speed, GB/s
3
13.8
Average value in the tests
Faster write speed, GB/s
2,404.5
10.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
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Below the latency in the PassMark tests, ns
28
104
Around -271% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
28
Read speed, GB/s
3,192.0
13.8
Write speed, GB/s
2,404.5
10.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
786
2179
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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