RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Kingston K821PJ-MIB 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Kingston K821PJ-MIB 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Kingston K821PJ-MIB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
13.8
Average value in the tests
Faster write speed, GB/s
2,404.5
11.0
Average value in the tests
Reasons to consider
Kingston K821PJ-MIB 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
104
Around -181% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Kingston K821PJ-MIB 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
37
Read speed, GB/s
3,192.0
13.8
Write speed, GB/s
2,404.5
11.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2458
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Kingston K821PJ-MIB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston K821PJ-MIB 16GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMK64GX4M4E3200C16 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C16-8GFX 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
Kingston 9905403-444.A00LF 4GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Corsair CMX4GX3M2A1600C9 2GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
Kingston 9905584-016.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Report a bug
×
Bug description
Source link