RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
18
Average value in the tests
Reasons to consider
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
64
104
Around -63% lower latency
Faster write speed, GB/s
8.5
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
64
Read speed, GB/s
3,192.0
18.0
Write speed, GB/s
2,404.5
8.5
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
2197
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C16-16GTRS 16GB
Kingston 9905403-444.A00LF 4GB
Panram International Corporation W4N2666PS-8G 8GB
Corsair CMD8GX3M2A2933C12 4GB
Hewlett-Packard 7TE39AA#ABC 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZKK 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin 99[2/7/4]205[F/T] 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3333C16-16GVR 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-2666C19-8GSXK 8GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX2400C14S4/8G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMT16GX4M2C3200C16 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW128GX4M4E3200C16 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston HP32D4U8S8ME-8X 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3333C16-4GRRD 4GB
Report a bug
×
Bug description
Source link