RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T5160QZ4-CE66 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
Report a bug
Faster reading speed, GB/s
2
16.8
Average value in the tests
Faster write speed, GB/s
2,072.7
15.4
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
75
Around -134% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
32
Read speed, GB/s
2,730.3
16.8
Write speed, GB/s
2,072.7
15.4
Memory bandwidth, mbps
5300
21300
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
858
3579
Samsung M395T5160QZ4-CE66 2GB RAM comparisons
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLGE85F-C8KL9A 2GB
Corsair CMD64GX4M4C3200C16 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M378A2K43DB1-CTD 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2133C15-8GVK 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW32GX4M4C3466C16 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GS88C-32N2200 8GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A4G43MB1-CTD 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Kingston 9905625-075.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston KMKYF9-MIB 8GB
Report a bug
×
Bug description
Source link