RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
69
Around -82% lower latency
Faster reading speed, GB/s
9.4
3
Average value in the tests
Faster write speed, GB/s
8.3
1,441.2
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
38
Read speed, GB/s
3,325.1
9.4
Write speed, GB/s
1,441.2
8.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
525
2110
Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons
Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2933C17S4/8G 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMU32GX4M2C3000C15 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M378A2G43AB3-CWE 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology CT51264BD1339.M16F 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Samsung M378B5673FH0-CH9 2GB
Kingston KHX3600C17D4/16GX 16GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK16GX4M2B3200C16 8GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Report a bug
×
Bug description
Source link