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Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB

Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

Overall score
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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.6
    Average value in the tests
Micron Technology 4ATF51264AZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-2G3B1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 69
    Around -103% lower latency
  • Faster write speed, GB/s
    11.2 left arrow 1,441.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    69 left arrow 34
  • Read speed, GB/s
    3,325.1 left arrow 15.6
  • Write speed, GB/s
    1,441.2 left arrow 11.2
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    525 left arrow 2468

Samsung M4 70T5663CZ3-CE6 2GB RAM comparisons

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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