Samsung M4 70T5663CZ3-CE6 2GB vs Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Overall score

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB

Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB

Faster reading speed, GB/s

3 16.9

Average value in the tests

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Reasons to consider
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Below the latency in the PassMark tests, ns

22 69

Around -214% lower latency
Faster write speed, GB/s

12.3 1,441.2

Average value in the tests
Higher memory bandwidth, mbps

19200 5300

Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T5663CZ3-CE6 2GB

Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

69 22
Read speed, GB/s

3,325.1 16.9
Write speed, GB/s

1,441.2 12.3
Memory bandwidth, mbps

5300 19200

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

525 2708

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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