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Samsung M4 70T5663EH3-CF7 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M4 70T5663EH3-CF7 2GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

Overall score
star star star star star
Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

Overall score
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Differences Specifications Comments

Differences

Samsung M4 70T5663EH3-CF7 2GB Reasons to consider
Samsung M4 70T5663EH3-CF7 2GB
Report a bug
Micron Technology 18ASF1G72AZ-2G1B1 8GB Reasons to consider
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 66
    Around -100% lower latency
  • Faster reading speed, GB/s
    9.6 left arrow 4
    Average value in the tests
  • Faster write speed, GB/s
    8.6 left arrow 1,906.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663EH3-CF7 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    66 left arrow 33
  • Read speed, GB/s
    4,323.0 left arrow 9.6
  • Write speed, GB/s
    1,906.1 left arrow 8.6
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    703 left arrow 2286

Samsung M4 70T5663EH3-CF7 2GB RAM comparisons

Samsung M4 70T5663QZ3-CF7 2GB
Corsair CM4X8GE2666C16K4 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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