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Samsung M4 70T5663RZ3-CF7 2GB
Gloway International (HK) STK2133C15-8GB 8GB

Samsung M4 70T5663RZ3-CF7 2GB vs Gloway International (HK) STK2133C15-8GB 8GB

Overall score
star star star star star
Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Overall score
star star star star star
Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

Differences Specifications Comments

Differences

Samsung M4 70T5663RZ3-CF7 2GB Reasons to consider
Samsung M4 70T5663RZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 13.3
    Average value in the tests
Gloway International (HK) STK2133C15-8GB 8GB Reasons to consider
Gloway International (HK) STK2133C15-8GB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 61
    Around -144% lower latency
  • Faster write speed, GB/s
    6.3 left arrow 1,903.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663RZ3-CF7 2GB
Gloway International (HK) STK2133C15-8GB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    61 left arrow 25
  • Read speed, GB/s
    4,668.9 left arrow 13.3
  • Write speed, GB/s
    1,903.1 left arrow 6.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    735 left arrow 1617

Samsung M4 70T5663RZ3-CF7 2GB RAM comparisons

Samsung M4 70T5663QZ3-CF7 2GB
Corsair CM4X32GC3200C16K2E 32GB

Gloway International (HK) STK2133C15-8GB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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