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Samsung M471A1G44AB0-CWE 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Compare
Samsung M471A1G44AB0-CWE 8GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Overall score
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
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Below the latency in the PassMark tests, ns
50
58
Around 14% lower latency
Faster write speed, GB/s
10.9
9.3
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Report a bug
Faster reading speed, GB/s
17.7
15.3
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A1G44AB0-CWE 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
50
58
Read speed, GB/s
15.3
17.7
Write speed, GB/s
10.9
9.3
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2512
1968
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
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Absolute Latency
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