RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-3600C16-8GTESC 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
G Skill Intl F4-3600C16-8GTESC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-8GTESC 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
38
Around -23% lower latency
Faster reading speed, GB/s
20.3
15.5
Average value in the tests
Faster write speed, GB/s
18.2
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
31
Read speed, GB/s
15.5
20.3
Write speed, GB/s
12.0
18.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
3738
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-8GTESC 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325S6CFR8C-H9 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hypertec G2RT-4AFT00 16GB
Samsung M471B5173QH0-YK0 4GB
Apacer Technology D12.2356WS.001 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston MSI21D4S15HAG/8G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C15-16GTZKW 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M378A5244CB0-CVF 4GB
Kingston KF552C40-16 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
A-DATA Technology DQKD1A08 1GB
Corsair CMD16GX4M4B3200C15 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Kingston KVR800D2N6/2G 2GB
Kingston KF3200C20S4/16G 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Samsung M393B2G70BH0-CH9 16GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD32GX4M4B3600C16 8GB
Report a bug
×
Bug description
Source link