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Samsung M471A5644EB0-CPB 2GB
SK Hynix HMA41GS6AFR8N-TF 8GB

Samsung M471A5644EB0-CPB 2GB vs SK Hynix HMA41GS6AFR8N-TF 8GB

Overall score
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Overall score
star star star star star
SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

Differences Specifications Comments

Differences

Samsung M471A5644EB0-CPB 2GB Reasons to consider
Samsung M471A5644EB0-CPB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 39
    Around 28% lower latency
SK Hynix HMA41GS6AFR8N-TF 8GB Reasons to consider
SK Hynix HMA41GS6AFR8N-TF 8GB
Report a bug
  • Faster reading speed, GB/s
    13.7 left arrow 13.2
    Average value in the tests
  • Faster write speed, GB/s
    10.2 left arrow 9.1
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A5644EB0-CPB 2GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 39
  • Read speed, GB/s
    13.2 left arrow 13.7
  • Write speed, GB/s
    9.1 left arrow 10.2
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1989 left arrow 2359

Samsung M471A5644EB0-CPB 2GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

SK Hynix HMA41GS6AFR8N-TF 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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