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Samsung M471B1G73DB0-YK0 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Below the latency in the PassMark tests, ns
45
71
Around 37% lower latency
Faster write speed, GB/s
8.1
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Faster reading speed, GB/s
15.6
11.9
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
71
Read speed, GB/s
11.9
15.6
Write speed, GB/s
8.1
6.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2077
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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calculate
Absolute Latency
0 ns
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