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Samsung M471B1G73EB0-YK0 8GB
Heoriady HX2666CX15D4/4G 4GB

Samsung M471B1G73EB0-YK0 8GB vs Heoriady HX2666CX15D4/4G 4GB

Overall score
star star star star star
Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Overall score
star star star star star
Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

Differences Specifications Comments

Differences

Samsung M471B1G73EB0-YK0 8GB Reasons to consider
Samsung M471B1G73EB0-YK0 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    46 left arrow 77
    Around 40% lower latency
  • Faster write speed, GB/s
    7.9 left arrow 7.6
    Average value in the tests
Heoriady HX2666CX15D4/4G 4GB Reasons to consider
Heoriady HX2666CX15D4/4G 4GB
Report a bug
  • Faster reading speed, GB/s
    14.7 left arrow 12.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B1G73EB0-YK0 8GB
Heoriady HX2666CX15D4/4G 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 77
  • Read speed, GB/s
    12.2 left arrow 14.7
  • Write speed, GB/s
    7.9 left arrow 7.6
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2072 left arrow 1688

Samsung M471B1G73EB0-YK0 8GB RAM comparisons

Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB

Heoriady HX2666CX15D4/4G 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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