RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
45
Around -22% lower latency
Faster reading speed, GB/s
15.4
12.3
Average value in the tests
Faster write speed, GB/s
12.4
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
37
Read speed, GB/s
12.3
15.4
Write speed, GB/s
8.0
12.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1992
2356
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DOVF1B163G2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Micron Technology 16JTF25664AZ-1G4F1 2GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Corsair CMY16GX3M4A2133C8 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Crucial Technology CT25664AA800.M16FG 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905702-120.A00G 8GB
A-DATA Technology DDR2 800G 2GB
SK Hynix HMA451R7AFR8N-UH 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA851S6DJR6N-VK 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX3200C20S4/8G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology GD2.1527WC.001 8GB
Kingston 9905471-002.A00LF 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAK 8GB
Report a bug
×
Bug description
Source link