Samsung M471B5173QH0-YK0 4GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Overall score

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Overall score

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Differences Specifications Comments

Differences

Samsung M471B5173QH0-YK0 4GB

Reasons to consider
Samsung M471B5173QH0-YK0 4GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Below the latency in the PassMark tests, ns

30 45

Around -50% lower latency
Faster reading speed, GB/s

16 12.3

Average value in the tests
Faster write speed, GB/s

10.6 8.0

Average value in the tests
Higher memory bandwidth, mbps

25600 12800

Around 2 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M471B5173QH0-YK0 4GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

45 30
Read speed, GB/s

12.3 16.0
Write speed, GB/s

8.0 10.6
Memory bandwidth, mbps

12800 25600

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1992 3026

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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