RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
Compare
Samsung M471B5273CH0-CH9 4GB vs A-DATA Technology DDR4 3600 2OZ 8GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
A-DATA Technology DDR4 3600 2OZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
A-DATA Technology DDR4 3600 2OZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
48
Around -92% lower latency
Faster reading speed, GB/s
19
8.9
Average value in the tests
Faster write speed, GB/s
14.9
5.9
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
25
Read speed, GB/s
8.9
19.0
Write speed, GB/s
5.9
14.9
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1420
3683
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
A-DATA Technology DDR4 3600 2OZ 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
ASint Technology SSA302G08-EGN1C 4GB
Mushkin 99[2/7/4]198F 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston ACR26D4S9S1ME-4 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Avant Technology W6451U67J5213NB 4GB
A-DATA Technology DDR4 2400 16GB
Corsair CMD64GX4M4C3200C16 16GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMU32GX4M2A2666C16 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2666C19-8GIS 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK64GX4M4X4000C18 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK8GX4M2B3733C17 4GB
Report a bug
×
Bug description
Source link