RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Micron Technology 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology 8ATF51264AZ-2G1A1 4GB
Report a bug
Below the latency in the PassMark tests, ns
43
48
Around -12% lower latency
Faster reading speed, GB/s
12.2
8.9
Average value in the tests
Faster write speed, GB/s
9.7
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
43
Read speed, GB/s
8.9
12.2
Write speed, GB/s
5.9
9.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1420
2501
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Micron Technology 8ATF51264AZ-2G1A1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9965589-008.D01G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited KD4AGU880-36A180U 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK16GX4M2Z2666C16 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Essencore Limited KD4AGS88A-26N1600 16GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Hexon Technology Pte Ltd HEXON 1GB
ISD Technology Limited KD48GU880-32A160X 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Samsung M378A1G43DB0-CPB 8GB
SpecTek Incorporated 16G2666CL19 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Report a bug
×
Bug description
Source link