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Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Compare
Samsung M471B5273EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
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Faster reading speed, GB/s
12.3
9.1
Average value in the tests
Faster write speed, GB/s
8.9
6.9
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
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Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
40
Read speed, GB/s
12.3
9.1
Write speed, GB/s
8.9
6.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1789
2031
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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