RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
37
Around 19% lower latency
Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
Faster reading speed, GB/s
21.4
10.6
Average value in the tests
Faster write speed, GB/s
14.3
6.8
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
37
Read speed, GB/s
10.6
21.4
Write speed, GB/s
6.8
14.3
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1479
3448
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Samsung M471B5673FH0-CF8 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Kingston HP698651-154-MCN 8GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Protocol Engines Kingrock 800 2GB 2GB
G Skill Intl F4-2400C16-8GRSB 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-3000C15-8GTZ 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMK32GX4M1A2400C16 32GB
AMD R7S48G2400U2S 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
Kingston 99U5429-007.A00LF 2GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Kingston 99U5471-012.A00LF 4GB
Kingston 9905712-008.A00G 16GB
Kingston KNWMX1-ETB 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
Report a bug
×
Bug description
Source link