RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
31
Around 3% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Faster reading speed, GB/s
15.7
10.6
Average value in the tests
Faster write speed, GB/s
13.3
6.8
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
31
Read speed, GB/s
10.6
15.7
Write speed, GB/s
6.8
13.3
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1479
3318
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Kingston KHX1866C10D3/8GX 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston 9965600-012.A01G 16GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F3-2133C11-8GAR 8GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-3000C15-8GVR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
AMD AE34G1601U1 4GB
Samsung M386A8K40CM2-CRC 64GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2400C15-16GFXR 16GB
Kingston 9905702-010.A00G 8GB
Corsair CMK64GX4M4E3200C16 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK16GX4M2D2400C14 8GB
Kingston KVR800D2N6/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Report a bug
×
Bug description
Source link