RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
34
Around 12% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Report a bug
Faster reading speed, GB/s
11.1
10.6
Average value in the tests
Faster write speed, GB/s
9.5
6.8
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
34
Read speed, GB/s
10.6
11.1
Write speed, GB/s
6.8
9.5
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1479
2319
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM comparisons
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-8GTZRX 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F3-1600C11-4GIS 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M391A1K43BB1-CRC 8GB
Kingston 9905403-444.A00LF 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Kingston 99U5429-014.A00LF 4GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Kingston 9905471-076.A00LF 8GB
Inmos + 256MB
Micron Technology 18HTF12872AY-800F1 1GB
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
×
Bug description
Source link