RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around 9% lower latency
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Faster reading speed, GB/s
17.8
10.6
Average value in the tests
Faster write speed, GB/s
12.5
6.8
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
33
Read speed, GB/s
10.6
17.8
Write speed, GB/s
6.8
12.5
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1479
3285
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2400C15-8GVR 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C14-8GVK 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX2666C13D4/8GX 8GB
A-DATA Technology DQKD1A08 1GB
Kingston 9965640-001.C00G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Kingston 99U5584-004.A00LF 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Apacer Technology 78.01G86.9H50C 1GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M471B5673FH0-CF8 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX2400C12D4/4GX 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M391A1K43BB2-CTD 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Kingston 99U5471-020.A00LF 4GB
INTENSO 5641160 8GB
Kingston KVR16N11/8-SP 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Report a bug
×
Bug description
Source link