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Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Samsung M471B5673FH0-CF8 2GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Overall score
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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Differences Specifications Comments

Differences

Samsung M471B5673FH0-CF8 2GB Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Patriot Memory (PDP Systems) 3600 C14 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 30
    Around -58% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    14.7 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 8500
    Around 2.51 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    30 left arrow 19
  • Read speed, GB/s
    10.6 left arrow 16.6
  • Write speed, GB/s
    6.8 left arrow 14.7
  • Memory bandwidth, mbps
    8500 left arrow 21300
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1479 left arrow 3626

Samsung M471B5673FH0-CF8 2GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB RAM comparisons

Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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