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Samsung M471B5673FH0-CF8 2GB
Ramaxel Technology RMT3170EB68F9W1600 4GB

Samsung M471B5673FH0-CF8 2GB vs Ramaxel Technology RMT3170EB68F9W1600 4GB

Overall score
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Overall score
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Differences Specifications Comments

Differences

Samsung M471B5673FH0-CF8 2GB Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 43
    Around 30% lower latency
Ramaxel Technology RMT3170EB68F9W1600 4GB Reasons to consider
Ramaxel Technology RMT3170EB68F9W1600 4GB
Report a bug
  • Faster reading speed, GB/s
    11.4 left arrow 10.6
    Average value in the tests
  • Faster write speed, GB/s
    7.7 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 8500
    Around 1.51 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    30 left arrow 43
  • Read speed, GB/s
    10.6 left arrow 11.4
  • Write speed, GB/s
    6.8 left arrow 7.7
  • Memory bandwidth, mbps
    8500 left arrow 12800
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1479 left arrow 1823

Samsung M471B5673FH0-CF8 2GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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