RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Compare
Samsung M471B5673FH0-CF8 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Overall score
Samsung M471B5673FH0-CF8 2GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5673FH0-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
30
66
Around 55% lower latency
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Report a bug
Faster reading speed, GB/s
14.7
10.6
Average value in the tests
Faster write speed, GB/s
7.3
6.8
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
66
Read speed, GB/s
10.6
14.7
Write speed, GB/s
6.8
7.3
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1479
1699
Samsung M471B5673FH0-CF8 2GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR512X64D3S16C11G 4GB
SK Hynix HMA82GR7AFR4N-VK 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4000C18-16GVK 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905701-004.A00G 16GB
Samsung M471B5673FH0-CF8 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Kingston 9905403-156.A00LF 2GB
Samsung M393A1G43DB1-CRC 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
A-DATA Technology DDR3 1600 4GB
Kingston KC5N22-MIE 16GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Kingston 9905458-017.A01LF 4GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3466C16-4GVK 4GB
Report a bug
×
Bug description
Source link