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Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Compare
Samsung M471B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Overall score
Samsung M471B5773DH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CH9 2GB
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Faster reading speed, GB/s
11
10.7
Average value in the tests
Faster write speed, GB/s
7.2
6.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
43
Around -54% lower latency
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
43
28
Read speed, GB/s
11.0
10.7
Write speed, GB/s
7.2
6.1
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1393
1720
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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