Samsung M471B5773DH0-CH9 2GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Samsung M471B5773DH0-CH9 2GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Overall score
star star star star star
Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Overall score
star star star star star
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Differences

  • Below the latency in the PassMark tests, ns
    30 left arrow 43
    Around -43% lower latency
  • Faster reading speed, GB/s
    15.9 left arrow 11
    Average value in the tests
  • Faster write speed, GB/s
    10.7 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CH9 2GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 30
  • Read speed, GB/s
    11.0 left arrow 15.9
  • Write speed, GB/s
    7.2 left arrow 10.7
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1393 left arrow 2846
RAM Latency Calculator
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